Discussion of Article 40 in Volume 3

This is a discussion of the MIJ-NSR article entitled Localized Epitaxy of GaN by HVPE on patterned Substrates by O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS

Description of the paper by the reviewer(s):

Reviewer 1: This article reports on on-going progress on HVPE GaN development at Ecole Polytechnique. GaN layers as thick as 100 um with good optical quality have been grown directly on sapphire. Substantial bowing and cracking of the thick GaN layers was observed upon cooldown from the growth temperature. Initial results of lateral growth on patterned substrates is reported.

This discussion is moderated by O. Parillaud.

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