Localized Epitaxy of GaN by HVPE on patterned Substrates
O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS
Institut de Micro- et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne
This article was received on Monday, June 22, 1998 and
accepted on Monday, October 19, 1998. Abstract
We
report ongoing experiments on the growth of GaN by hydride vapor phase epitaxy
(HVPE), using a newly designed Aixtron horizontal reactor. Growth was carried
out on c-plane Al2O3 substrates on which a thin GaN layer
had been predeposited by MOVPE and patterned using a dielectric mask. The mask
pattern was designed to give information on the growth rate and morphology
along different directions, and contained both a star-shaped pattern and arrays
of parallel stripes of various widths and orientations. All growths were
performed at atmospheric pressure and ~1050°C deposition
temperature. For the range of experimental conditions investigated the maximum
ratios of lateral to vertical growth velocities of around 2 and coalescence of
the layer after approximately 10 µm of growth were observed for stripes
oriented along the <1
00> direction. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 40(1998).
last updated Friday, September 17, 1999 4:44:55 AM.© 1998-1999 The Materials Research Society
