Figures

Figure 1

Sheet resistance mapping of a 0.5 µm GaN:Si layer on c-plane sapphire: average resistance is 15.75 /square with a standard deviation of 0.86 %

Figure 2

Thickness mapping of a GaN layer on sapphire substrate: average thickness is 2.44 µm with a standard deviation of 0.75%

Figure 3a

RT PL peak wavelength mapping of a full 2" wafer GaInN/GaN heterostructure and wavelength distribution: average wavelength is 382.44 nm with a standard deviation of 0.94 nm (distribution bin size is 1 nm)

Figure 3b

RT PL peak wavelength mapping of a full 2" wafer AlGaN/GaN heterostructure and wavelength distribution: average wavelength is 340.31 nm with a standard deviation of 0.26 nm (distribution bin size is 1 nm)

Figure 4

stimulated emission and LT laser action by optical pumping with increasing excitation intensity of a simple GaN/GaInN DH structure [3]

© 1998 The Materials Research Society