GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary® Reactors


O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen
AIXTRON AG

M. D. Bremser
AIXTRON Inc.

This article was received on Monday, June 22, 1998 and accepted on Monday, October 19, 1998.

Abstract

Using optimised growth processes for an AIX 2000 HT Planetary® Reactor a high material quality and high potential device yield are demonstrated. Doping levels for GaN single layers from 1·1020 cm-3 free electrons to semi-insulating to 1·1018 cm-3 free holes with state-of-the-art layer resistance uniformities especially for n-type layers are shown. Both AlGaN and GaInN with composition homogeneities of better than 1 nm photoluminescence peak-wavelength standard deviation are displayed. Finally, examination of optically pumped laser action in simple double-hetero structures is quoted to prove the quality of the material.

Outline

  • Introduction
  • Sample Preparation
  • Electrical characterization
  • Thickness measurement
  • Composition homogeneity of ternary compounds
  • Material property qualification by device fabrication
  • Conclusion
  • Acknowledgments

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    Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 38(1998).

    last updated Monday, October 19, 1998 5:57:12 PM.

    © 1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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