Figures

Figure 1

I-V curves for Au Schottky diodes prepared on the n-AlGaN (x=0.11) sample in three different processes (see text).

Figure 2

The 20 KHz capacitance measured as a function of temperature on the n-AlGaN (x=0.11) sample with a Schottky diode deposited by thermal evaporation (Process III) and by plasma sputtering; mind the appearance of the step in capacitance related to the electron trap with activation energy of 0.14 eV.

Figure 3

The temperature dependence of the 20 kHz capacitance for the AlGaN (x=0.11) sample measured in the dark during cooling and after exposure to UV light at 85K.

Figure 4

The temperature dependence of the 1 kHz capacitance for the AlGaN (x=0.23) sample measured in the dark during cooling and after exposure to UV light at 85K.

Figure 5

Capacitance versus frequency measurements on the AlGaN (x=0.11) sample made at 300K, at 85K in the dark and at 85K in the dark after illumination.

Figure 6

Capacitance versus frequency measurements on the AlGaN (x=0.23) sample made at 300K, at 85K in the dark and at 85K in the dark after illumination.

© 1998 The Materials Research Society