Tables
Table 1
Ideality factors (n) and Schottky barrier heights measured for various Au Schottky diodes preparation processes; mind a significant difference between the barrier height deduced from C-V (
C-V) and I-T (I-V and I-T) for Processes I-III for all samples and for Process V (plasma sputtering) for the x=0 and x=0.11 samples, but not for the x=0.23 sample
Process
|
x
|
n
|
C-V,
eV
|
I-T,
eV
|
I-V,
eV
|
I
|
0
|
1.18
|
1.0
|
0.6
|
0.6
|
0.11
|
1.1
|
1.08
|
0.56
|
0.7
|
0.23
|
1.15
|
1.3
|
0.8
|
0.85
|
II
|
0
|
1.22
|
1.0
|
0.65
|
0.6
|
0.11
|
1.16
|
1.02
|
0.68
|
0.6
|
0.23
|
1.17
|
1.25
|
0.95
|
0.9
|
III
|
0
|
1.02
|
0.8
|
0.7
|
0.75
|
0.11
|
1.0
|
0.9
|
0.83
|
0.85
|
0.23
|
1.06
|
1.1
|
1.0
|
1.05
|
IV
|
0
|
nearly
ohmic behavior
|
0.11
|
nearly
ohmic behavior
|
0.23
|
nearly
ohmic behavior
|
V
|
0
|
1.02
|
0.8
|
0.56
|
0.6
|
0.11
|
1.06
|
0.85
|
0.6
|
0.6
|
0.23
|
1.02
|
1.05
|
0.95
|
1.0
|
last updated Friday, October 16, 1998 12:52:32 PM.© 1998 The Materials Research Society
