(click for full image)
An SEM image and comparative CL images acquired at 15 keV from the 10° epilayer. The image acquired at 3.48 eV corresponds to D0X emission, where the donor is the silicon dopant. The image acquired at 3.41 eV corresponds to excitonic emission attributed to structural defects. The image acquired at 3.288 eV corresponds to DAP emission. The black scale marker corresponds to 10 µm.
© 1998 The Materials Research Society
