Figures

Figure 1

A schematic structure of the considered nitride VCSEL.

Figure 2

Dependence of the C Auger recombination coefficient of many semiconductor materials [50] on their electron effective masses, m_e. The extrapolation giving the C value (C_GaN = 1.4^.10^-31 cm⁶s^-1) is shown. m_e,GaN = 0.22m₀ is taken from Ref. [21]. m₀ is the electron rest mass.

Figure 3

Reflectivity of the front (R_F) and the rear (R_R) AlN/Al_0.15Ga_0.85N DBR mirrors versus number m of their periods

Figure 4

Threshold current density of index-guided (IG) and gain-guided (GG) GaN VCSELs with various active regions versus product of reflectivities of their resonator mirrors.

Figure 5

Threshold current density in a logarithmic scale of large (r_A = 5 µm) GaN VCSELs with bulk (d_A = 0.2 µm), SQW or 5-MQW active regions (d_A = 4 nm) of different material losses in cladding layers versus product of reflectivities of their resonator mirrors.

Figure 6

Threshold current density of optimal gain-guided MQW and SQW as well as bulk VCSELs versus product of reflectivities of their resonator mirrors.

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© 1998 The Materials Research Society