Figures

Figure 1

Temperature dependence of electron concentration, mobility and resistivity of four GaN:Si layers.

Figure 2

ESR spectra of GaN:Si layers.

Figure 3

Integrals of UV photoluminescence emission at room temperature. The room temperature PL spectra of GaN:Si layers in the UV region are plotted in the insert.

Figure 4

The low temperature photoluminescence spectra of two GaN:Si layers of different polarity grown in the same conditions. Solid line is the spectrum of relaxed layer, N-terminated (rough with hexagonal hillocks). Dashed line represent spectrum of strained layer, Ga-terminated (smooth with mirror like surface).

Figure 5

The low temperature photoluminescence spectra of GaN:Si layers. (The room temperature electron concentrations are given below the sample names.)

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