Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
K. Pakula, M. Wojdak
Institute of Experimental Physics, Warsaw University
M. Palczewska, B. Suchanek
Institute of Electronic Materials Technology
Jacek M. Baranowski
Institute of Experimental Physics, Warsaw University
This article was received on Monday, June 22, 1998 and
accepted on Wednesday, October 7, 1998. Abstract
Investigations
of luminescence and ESR of silicon doped GaN layers are presented. The room
temperature electron concentration in the investigated layers ranged from
1.7x1017 cm-3 to 7x1018 cm-3. The
layer with the highest electron concentration has metallic conductivity. The
ESR investigation revealed the presence of a characteristic asymmetric
resonance whose intensity grows with increasing silicon impurity concentration.
This resonance, corresponding to perpendicular g=1.985 and parallel g=1.983 has
been observed in Si doped layers with electron concentration below the Mott
transition. It seems that the ESR resonance is due to isolated Si donors. It
has been found that the total PL emission increases with the silicon
concentration, and is strongest in the layer with metallic conductivity. This
indicates that silicon impurities eliminate non-radiative recombination centers
or they create a new path of radiative recombination. The AFM and low
temperature PL measurements indicate that strain relief via creation of
pinholes may be responsible for the increase of radiative emission in GaN:Si
epilayers. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 34(1998).
last updated Wednesday, March 24, 1999 12:07:40 PM.© 1998-1999 The Materials Research Society
