Figures

Figure 1

Temperature dependence of concentration and mobility for GaN epilayers grown on sapphire.

Figure 2

(top) Photocurrent for SAP 119 at different magnetic fields. (bottom) Position of PC lines vs. magnetic field. Lines represent theoretical calculations.

Figure 3

(top) Photocurrent for MAR 51 at different magnetic fields. (bottom) Position of PC lines vs. magnetic field. Lines represent theoretical calculations.

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© 1998 The Materials Research Society