Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
A. M. Witowski, M. L. Sadowski
Institute of Experimental Physics, Warsaw University
and
Grenoble High Magnetic Field Laboratory MPI CNRS
K. Pakula, B. Suchanek, R. Stepniewski, Jacek M. Baranowski
Institute of Experimental Physics, Warsaw University
M. Potemski, G. Martinez, P. Wyder
Grenoble High Magnetic Field Laboratory MPI CNRS
This article was received on Wednesday, June 24, 1998 and
accepted on Wednesday, October 7, 1998. Abstract
Far
infrared magnetooptical investigations of shallow donors in epitaxial MOCVD GaN
layers show two types of shallow donors. In relaxed layers, a donor with an
ionization energy of 35 meV was found. In strained, undoped and Si doped
samples, a donor with ionization energy 32.5 meV was observed. From the p state
splitting in magnetic field, the cyclotron effective mass for conduction
electrons was found to be m*=0.222 m
