M. A. Sánchez-García, F. J. Sánchez, F. B. Naranjo, F. Calle, E. Calleja, E. Muñoz
Dpt. Ingeniería Electrónica, E.T.S.I. Telecomunicación, Politécnica, Ciudad Universitaria
U. Jahn, K. H. Ploog
Paul-Drude-Institut fur Festkorperelektronik
Four different morphologies are obtained by increasing the III/V ratio: a)
completely columnar whisker-like samples exhibiting a pair of intense excitonic
emissions at 3.471-3.478 eV; b) a mixture of compact regions with columnar
microcrystals showing two pairs of excitonic emissionsnbsp c) compact layers
with very small microcrystals on the top surface with a weaker dominant
transition at 3.415 eV (±5meV) and, d) full compact and smooth layers
with a single dominant excitonic emission at 3.466 eV. A combination of PL
measurements with SEM photographs and CL imaging reveals that both pairs of
emissions in samples b) come from the columnar microcrystals. The high energy
pair (3.471-3.478eV) is attributed to the free-exciton A and a donor-bound
exciton while the low energy pair (3.452-3.458eV) is assigned to acceptor-bound
excitons associated to valence bands 9v and
7uv.
Power and temperature dependence
together with time-resolved data show that the dominant peak at 3.415eV
(± 5meV) present in samples c) correspond to a donor-acceptor
transition. CL measurements as a function of electron beam energy (depth) also
indicate that this emission is more intense towards the interface between the
layer and the sample. Finally, the excitonic emission in samples d) is shifted
to lower energies due to residual biaxial tensile strain of thermal
origin.