Thermodynamic properties of group-III nitrides and related species


I. N. Przhevalskii
Russian Research Center "Applied Chemistry"

S. Yu. Karpov
Soft-Impact Ltd (St.Petersburg, Russia)

Yu. N. Makarov
Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg

This article was received on Friday, June 19, 1998 and accepted on Wednesday, September 30, 1998.

Abstract

A database for thermodynamic properties of group-III nitrides and relevant species involved into growth of these materials is developed in this paper. Standard formation enthalpies of materials and coefficients of polynomial approximations of the reduced Gibbs free energies are collected in the tables. They allow one to determine the Gibbs free energy, enthalpy, entropy and specific heat of a species as a function of temperature. The database covers solid and gaseous group-III nitrides, elemental species, gaseous metal-organic compounds, chlorides and hydrides of group-III elements, nitrogen containing precursors and organic byproducts of various chemical reactions proceeding during growth processes. Thermodynamic properties of adducts which can be formed in the vapor phase while mixing ammonia and metal-organic compounds are presented in the database as well. Much of the data given in this paper is presented for the first time. All the data are checked for self-consistency and therefore can be used for thermodynamic calculations.

Outline

  • Introduction
  • Notation and general relationships
  • Organization of the database
  • Comments
  • AlCH3(g) monomethylaluminum (MMA)
  • Al(CH3)3(g) trimethylaluminum (TMA)
  • Al2(CH3)6(g)
  • AlN(s)
  • a-C2H2(g) vinylidene
  • GaCH3 monomethylgallium (MMG)
  • Ga(CH3)3(g) trimethylgallium (TMG)
  • GaH2(g)
  • GaH3(g)
  • GaN(s)
  • GaN(g)
  • InCH3 monomethylindium (MMI)
  • In(CH3)3(g) trimethylindium (TMI)
  • InH2(g)
  • InH3(g)
  • InN(s)
  • Adducts formed while mixing gaseous group-III compounds and ammonia
  • AlNH3(g)
  • GaNH3(g)
  • Al(CH3)3·NH3(g)
  • Ga(CH3)3·NH3(g)
  • (Al(CH3)2·NH2)3(g)
  • (Ga(CH3)2·NH2)3(g)
  • (Al(CH3)2·NH2)2(Ga(CH3)2·NH2)(g) and (Al(CH3)2·NH2)(Ga(CH3)2·NH2)2(g)
  • AlCH3NH(g) and GaCH3NH(g)
  • (AlCH3·NH)3(g) and (GaCH3·NH)3(g)
  • (AlN)3 and (GaN)3
  • GaCl3·NH3
  • Summary

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    Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 30(1998).

    last updated Friday, September 17, 1999 10:28:46 AM.

    © 1998-1999 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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