MIJ-NSR Vol. 3, Art. 3, H. Marchand et al.

Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD

H. Marchand, J.P. Ibbetson, Paul T. Fini , Peter Kozodoy , S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara

This article was received on Sunday, February 8, 1998 and accepted on Tuesday, February 24, 1998.

Abstract

Extended defect reduction at the surface of GaN grown by lateral epitaxial overgrowth (LEO) on large-area GaN/Al₂O₃ wafers by low pressure MOCVD is demonstrated by atomic force microscopy. The overgrown GaN has a rectangular cross section with smooth (0001) and {11

0} facets. The density of mixed character threading dislocations at the surface of the LEO GaN is reduced by at least 3-4 orders of magnitude from that of bulk GaN. Dislocation-free GaN surfaces exhibit an anisotropic step structure that is attributed to the orientation dependence of the dangling bond density at the step edges.

Outline

Introduction

Experimental

Results and Discussion

Conclusion

Acknowledgments

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 3(1998).

last updated Saturday, July 24, 1999 8:35:16 PM.