Optical Properties of GaNAs Grown by MBE
G. Pozina, I. G. Ivanov, B. Monemar
Department of Physics and Measurement Technology, Linköping University
J.V. Thordson, T.G. Andersson
Chalmers University of Technology
and
University of Göteborg, Sweden
This article was received on Tuesday, April 7, 1998 and
accepted on Monday, September 28, 1998. Abstract
Optical
properties of the GaNxAs1-x layers grown on (001) GaAs
substrates by molecular beam epitaxy have been studied. The samples can be
classified into three categories with respect to the concentration of N, as
determined by x-ray diffraction and secondary-ion mass spectrometry: (i) with
doping nitrogen concentration, (ii) with average content of N less than 30 %,
and (iii) with x close to 100 %. From optical measurements of
photoluminescence and Raman scattering, combined with analysis of x-ray
diffraction spectra, different phases are observed in the
GaNxAs1-x layers: GaAs, GaN and the solid ternary
solution GaNxAs1-x. We have estimated the fundamental
band-gap energy in the GaNxAs1-x alloy with low nitrogen
concentration (up to x = 0.04) from absorption measurements, and in
GaNxAs1-x with low arsenic concentration (up to
1-x = 0.04) - from photoluminescence spectra. An analysis of the
dependence of the experimental values of the GaNxAs1-x
band-gap energy on the nitrogen composition indicates a constant bowing
parameter b as large as b = -18 eV. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 29(1998).
last updated Friday, October 9, 1998 7:18:00 PM.© 1998 The Materials Research Society
