Discussion of Article 28 in Volume 3

This is a discussion of the MIJ-NSR article entitled Heterostructure for UV LEDs Based on Thick AlGaN Layers by A. V. Sakharov, W. V. Lundin, A. Usikov, U. I. Ushakov, Yu A. Kudriavtsev, A.V. Lunev, Y.M. Sherniakov, N.N. Ledentsov

Description of the paper by the reviewer(s):

Reviewer 1: This paper describes the realization of UV LEDs using GaN/AlGaN double-heterostructures. It is shown that the use AlGaN instead of GaN in the bottom n-layer improves the transmission of the UV electroluminescence of the LED.

This discussion is moderated by A. V. Sakharov.

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