Tables for MIJ-NSR Volume 3, Article 27

Tables

GaN layers deposition sequence and the gas flow rates.

	Substrate annealing	Nitridation	1^stbuffer layer growth	2^ndbuffer layer growth	Buffer layers annealing	High temp. growth
TMGa [µmol/min]			9.6	13.4=>0 9.6=>0 9.6=>3.2		13.4
NH₃ [mmol/min]		89	89	89	89	15.6-133.5
H₂ [slm]	2	2	2	2	2	2-3.5
Temperature [°C]	1040	1040	480	480=>1040	1040	1040
Time [min]	20	27	5	10	0=>15	60=>

last updated Sunday, September 27, 1998 12:23:22 AM.