Figures

Figure 1a

The GaN high temperature layers lattice parameters. Labels A, B, C indicate the second buffer layer growth scheme.

Figure 1b

The GaN high temperature layers c-lattice parameter variation and mosaicity. Labels A, B, C indicate the second buffer layer growth scheme.

Figure 2a

The GaN high temperature layers lattice parameters. Labels indicate the second layer growth scheme (C) and sample number.

Figure 2b

Two buffer layers annealing time versus mosaicity and c-lattice parameter variation of the GaN high temperature layers. Labels indicate the second layer growth scheme (C) and sample number.

Figure 2c

Two buffer layers annealing time versus the background carrier concentration of the GaN high temperature layers. Labels indicate the second layer growth scheme (C) and sample number.

Figure 3a

The lattice parameters of the GaN high temperature layers grown with different V/III molar ratio. Labels indicate the second layer growth scheme (C) and sample number.

Figure 3b

The V/III molar ratio during the main GaN layer growth versus layers: mosaicity and c-lattice parameter variation. Labels indicate the second layer growth scheme (C) and sample number.

Figure 3c

The V/III molar ratio during the main GaN layer growth versus layers: background carrier concentration and thickness. Labels indicate the second layer growth scheme (C) and sample number.

© 1998 The Materials Research Society