Figure 3a

The lattice parameters of the GaN high temperature layers grown with different V/III molar ratio. Labels indicate the second layer growth scheme (C) and sample number.

Figure 3b

The V/III molar ratio during the main GaN layer growth versus layers: mosaicity and c-lattice parameter variation. Labels indicate the second layer growth scheme (C) and sample number.

Figure 3c

The V/III molar ratio during the main GaN layer growth versus layers: background carrier concentration and thickness. Labels indicate the second layer growth scheme (C) and sample number.

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