Figure 2a

The GaN high temperature layers lattice parameters. Labels indicate the second layer growth scheme (C) and sample number.

Figure 2b

Two buffer layers annealing time versus mosaicity and c-lattice parameter variation of the GaN high temperature layers. Labels indicate the second layer growth scheme (C) and sample number.

Figure 2c

Two buffer layers annealing time versus the background carrier concentration of the GaN high temperature layers. Labels indicate the second layer growth scheme (C) and sample number.

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