Discussion of Article 27 in Volume 3

This is a discussion of the MIJ-NSR article entitled Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach by J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala

Description of the paper by the reviewer(s):

Reviewer 1: Paper reports on a new multi step buffer appraoch and its effect on structural properties on GaN. The influence of low TMGa flow and its imrovement on buffer is a novel and interesting find.

Comments on this paper by the reviewer(s):

Reviewer 1: This paper reports on a novel buffer growth technique and its effect on mosaic structure of gaN on sapphire. Results are clear and well presented. Since background doping was measured, please report on the corresponding Hall mobility numbers. Accept

This discussion is moderated by J. Kozlowski.

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