Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
J. Kozlowski, R. Paszkiewicz, R. Korbutowicz, M. Panek, B. Paszkiewicz, M. Tlaczala
Institute of Microsystem Technology, Wroclaw University of Technology
This article was received on Tuesday, June 23, 1998 and
accepted on Friday, September 25, 1998. Abstract
GaN undoped layers of good morphology, good crystallinity and
electrical properties were grown on c-plane sapphire substrates by the
atmospheric pressure MOVPE technique using a new multi-buffer growth approach.
A suitable buffer layer growth technique was worked out which enabled growth of
GaN layers with properties superior to those grown in a conventional process
scheme. Additional buffer layers, deposited with increasing temperature and
increasing V/III molar ratio, were inserted between the low temperature buffer
layer and the high temperature GaN layer grown on it. The c and a lattice
constants of the high temperature GaN overgrown layer were evaluated from X-ray
data. The layer mosaicity and c-lattice parameter variation were determined.
The relationship between c and a lattice parameters and the second buffer layer
growth scheme has been studied. The effect of second buffer layer growth
conditions, buffer layer annealing time as well as the influence of V/III molar
ratio during the high temperature GaN deposition on the crystalline and
electrical properties of overgrown GaN epitaxial layers are presented.
Characterization includes surface morphology examination by SEM and Nomarski
optical microscope, X-ray diffraction and C-V measurements.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 27(1998).
last updated Sunday, September 27, 1998 12:20:53 AM.© 1998 The Materials Research Society
