Figures

Figure 1

GaN crystals obtained in a synthesis process under the following conditions: T=550°C, p=5 kbar, Ga:LiNH2:NH3=1:2:20.

Figure 2

Photoluminescence spectra (measured at 4.2K) of GaN, AlN and BN crystals obtained by AMMONO method.

Figure 3

Near band-gap energy region of AMMONO GaN photoluminescence with very narrow exciton lines (FWHM~1meV).

© 1998 The Materials Research Society