MIJ-NSR Vol. 3, Art. 25, R. Dwilinski et al.

AMMONO method of BN, AlN and GaN synthesis and crystal growth.

This article was received on Tuesday, June 23, 1998 and accepted on Wednesday, September 23, 1998.

Abstract

Microcrystals of BN, AlN and GaN were obtained by the AMMONO method, in which nitridization of metal occurs in supercritical ammonia, at relatively low temperature and pressure conditions (below 550°C and 5 kbar). The reaction rate was regulated by the amount of mineralizers, i.e. alkali metal amides.

All crystals obtained by AMMONO method revealed intense and homogenous luminescence. Significant improvement of the optical properties was observed for crystals grown in the presence of Rare Earth elements. For such GaN crystals, helium temperature photoluminescence spectra were dominated by near-band-gap recombination. Exciton lines were extremely narrow, with full-width half-maximum (FWHM) as low as 1 meV. The concentration of uncompensated shallow donors in AMMONO GaN determined by electron paramagnetic resonance measurements was below 5x10¹⁵ cm^-3.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 25(1998).

last updated Friday, October 9, 1998 5:39:28 PM.