Figures

Figure 1

Hall electron concentration and mobility of two (3 and 6 µm thick) undoped GaN layers grown under the same conditions except for the growth time.

Figure 2

Electron concentration and mobility of 3µm thick layers as a function of growth temperature (a,b) and V/III ratio (c,d). The shaded regions indicate samples with pin-holes at the surface.

Figure 3

Low temperature (4.2K) photoluminescence spectra of the GaN layer. Free excitons (XA and XB) and donor bound exciton (DBE) are shown. Donor-acceptor (D-A) structure is seen in the inset.

Figure 4

Rocking curve FWHM (left axis) and lattice constant c (right axis) of 3 µm thick layers as a function of the V/III ratio.

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© 1998 The Materials Research Society