This article was received on Monday, June 22, 1998 and
accepted on Friday, September 18, 1998.
Abstract
Growth
of GaN/Al2O3 layers by MOVPE has been investigated.
Precise optimization of the growth parameters results in films with extremely
high electron mobility: 900 cm2/Vs at 300K and 4000
cm2/Vs at 77K. The influence of the growth parameters on film
properties like morphology, crystallographic structure, and the concentration
of electrically active defects is presented. The mechanism of dislocation
density reduction is proposed to explain the obtained results.
