Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
E. Kim, I. Berichev, A. Bensaoula
The Space Vaccum Epitaxy Center, University of Houston
A. Schultz, K. Waters
Ionwerks
W. Zagozdzon-Wosik
Department of Electrical and Computer Engineering, University of Houston
This article was received on Tuesday, June 16, 1998 and
accepted on Tuesday, September 15, 1998. Abstract
Gallium
Nitride (GaN) thin films were successfully grown by electron cyclotron
resonance molecular beam epitaxy (ECR-MBE), gas source MBE (GSMBE), and
chemical beam epitaxy (CBE). Time of flight mass spectroscopy of recoiled ions
(TOF-MSRI) and reflection high energy electron diffraction (RHEED) were used
in-situ to determine the surface composition, crystalline structure, and growth
mode of GaN thin films deposited by the three MBE methods. The substrate
nitridation and the buffer layers were monitored and optimized by TOF-MSRI and
RHEED. For GSMBE, the gallium to nitrogen ratio is found to correlate well with
ex-situ optical properties. In the case of CBE, carbon incorporation determines
the surface morphology, crystalline quality and optical activity of the
epilayers. 
