EBS 
EV EC 
EV and EC, potential lineups 
, band structure contributions EBS (all in eV and relative to the band edges of the wurtzite phase), and monopole interface charges (in C/m2) for stacking fault interfaces. EC has been corrected by a scissor operator extracted from experimental bulk data. Values for unrelaxed interfaces are given in parenthesis. The conversion factor from C/m2 to e/cm2 is 6.241x1014.| AlN | GaN | |
|---|---|---|
| EBS |
-0.25 | -0.04 |
| |
0.27 (0.15) | 0.08 (0.06) |
| EV |
0.02 (-0.10) | 0.04 (0.02) |
| EC |
1.30 (1.40) | 0.12 (0.14) |
| |
0.009 (0.022) | 0.003 (0.006) |
© 1998 The Materials Research Society
