Figure 9

Schematic principle of the two step GaN lateral overgrowth process. In step (1), undoped GaN is grown at 1080°C. In these conditions, the top C facets vanish. In step (2), under the same growth conditions but due to Mg doping, the C facets become the slow planes therefore reappearing and leading to planarization by expansion. The arrows represent the trajectories of the C facet edges.

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