Figure 6

SEM cross section of lateral overgrowth of undoped GaN in standard conditions. Though perfect coalescence is obtained (without voids at the coalescence boundaries due to very slow growth rates), no smoothing is achieved.


(click for full image)

article homepage        text       Figure 5       Figure 7

last updated Friday, September 11, 1998 12:20:28 PM.

© 1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research