Discussion of Article 20 in Volume 3

This is a discussion of the MIJ-NSR article entitled Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy by B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J.-C. Guillaume, P. Vénnègues, S. Haffouz, Pierre Gibart

Description of the paper by the reviewer(s):

Reviewer 1: This paper presents interesting results on the effect of Mg on the growth anisotropy and introduces an original two-step growth process to reduce dislocation densities in the laterally overgrown layers.

This discussion is moderated by B. Beaumont.

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