Figures

Figure 1

Arrhenius plot of the Be concentration measured by SIMS as a function of the Be cell temperature. The scale of Be concentration is arbitrary, because no SIMS calibration was available for Be in GaN.

Figure 2

Typical low temperature PL spectrum of a Be-doped GaN layer.

Figure 3

Temperature evolution of the transition energy of the near bandgap emissions. The best fit to the FXA variation and the fitting parameters are shown.

Figure 4

Variation of PL spectra with increasing temperature under P = 1mW.

Figure 5

Evolution of PL spectra with increasing excitation power at T = 4K.

Figure 6

Low temperature PL decays of FXA and DAP emissions.

Figure 7

Time resolved PL spectra recorded in 10 ns periods between 0 and 260 ns at 10K.

Figure 8

Intensity variation of the 2.4-2.5 eV band at low temperature with increasing Be concentration.

Figure 9

Low temperature evolution of the 2.4-2.5 eV band with increasing excitation power.

Figure 10

Evolution of the 2.4-2.5 eV band with temperature under P = 1mW.

Figure 11

Low temperature PL decay of the emission at 2.25 eV.

Figure 12

PL-EPR spectrum of a Be-doped GaN layer, measured via the 2.4-2.5 eV band. Inset : high resolution spectrum, showing shallow donors resonances.

© 1998 The Materials Research Society