Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
F. J. Sánchez, F. Calle, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz
Dpt. Ingeniería Electrónica, E.T.S.I. Telecomunicación, Politécnica, Ciudad Universitaria
C. H. Molloy, D. J. Somerford
Department of Physics and Astronomy, University of Wales
F. K. Koschnick, K. Michael, J.-M. Spaeth
Fachbereich Physik, University of Paderborn
This article was received on Friday, June 19, 1998 and
accepted on Thursday, September 10, 1998. Abstract
Low temperature photoluminescence spectra of Be-doped layers grown on
Si (111) by molecular beam epitaxy have been analyzed. Emissions at 3.466 eV
and 3.384 eV, and a broad band centered at 2.4-2.5 eV are observed. Their
evolution with temperature and excitation power, and time resolved PL
measurements ascribe an excitonic character for the luminescence at 3.466 eV,
whereas the emission at 3.384 eV is associated with a donor-acceptor pair
transition. This recombination involves residual donors and Be-related
acceptors, which are located around 90meV above the valence band, confirming Be
as the shallowest acceptor reported in GaN. The intensity of the band at
2.4-2.5 eV increases with the Be content. This emission involves a band of deep
acceptors generated by Be complex defects, as suggested by the parameter g =
2.008 ± 0.003 obtained by photoluminescence-detected electron
paramagnetic resonance.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 19(1998).
last updated Friday, September 11, 1998 1:01:56 AM.© 1998 The Materials Research Society
