Figures

Figure 1

Effect of the electron irradiation on the NIR PL spectra from GaN epilayers with n-type conductivity.

Figure 2

Effect of the electron irradiation on the NIR PL spectra from GaN epilayers with p-type conductivity.

Figure 3

PL spectra of the compensated GaN epilayers irradiated with a dose 1x 10 18 cm-2. Spectra were measured using above band gap excitation of the 351 nm line from an Ar+ laser (red curve) and below band gap excitation of 780 nm (blue curve) from a tunable Ti-sapphire laser, respectively.

Figure 4

Temperature dependent PL spectra of GaN epilayers grown on SiC and sapphire substrates, respectively. The NP* denotes the no-phonon line of the hot emission, observed at elevated temperatures,

Figure 5

The dependence of the PL intensity (IPL) on an applied magnetic field (B) detected at 0.875 eV for GaN/Al2O3 epilayer. The magnetic field was parallel to the c-axis of the GaN epilayers. The derivative spectrum, shown in this Figure, was measured using a differential technique by modulating the applied magnetic field with a frequency of a few kHz.

© 1998 The Materials Research Society