Figure 5

The dependence of the PL intensity (I_PL) on an applied magnetic field (B) detected at 0.875 eV for GaN/Al₂O₃ epilayer. The magnetic field was parallel to the c-axis of the GaN epilayers. The derivative spectrum, shown in this Figure, was measured using a differential technique by modulating the applied magnetic field with a frequency of a few kHz.

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