Discussion of Article 18 in Volume 3

This is a discussion of the MIJ-NSR article entitled Optical properties of electron-irradiated GaN by I. A. Buyanova, Mt. Wagner, W. M. Chen, L. Lindström, B. Monemar, H. Amano, I. Akasaki

Description of the paper by the reviewer(s):

Reviewer 1: The authors have use photoluminescence and optically-detected magnetic resonance techniques to investigate the properties of defect-related deep levels produced by 2.5 MeV electron irradiation of GaN. Measurements are performed on both n-type and p-type samples as well as samples on different substrates. The authors make claims about the nature of the defects based upon their analysis.

This discussion is moderated by I. A. Buyanova.

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