Optical properties of electron-irradiated GaN
I. A. Buyanova, Mt. Wagner, W. M. Chen, L. Lindström, B. Monemar
Department of Physics and Measurement Technology, Linköping University
H. Amano, I. Akasaki
Department of Electrical and Electronic Engineering, Meijo University
This article was received on Monday, June 22, 1998 and
accepted on Thursday, September 10, 1998. Abstract
The
electronic structure of defects produced by 2.5-MeV electron irradiation and
their effect on optical properties of GaN are investigated using
photoluminescence (PL) and optically detected magnetic resonance (ODMR)
techniques. The electron irradiation is shown to produce, in particular, a deep
PL band with a no-phonon line at around 0.88 eV followed by a phonon-assisted
sideband. We suggest that this emission is caused by an internal transition
between excited and ground state of a deep defect. The excited state is a
multiple-level state, as revealed from temperature dependent PL and level
anti-crossing experiments. The electronic structure of the 0.88 eV defect is
shown to be sensitive to the internal strain in the GaN epilayers. The ODMR
studies reveal that the principal axis of the defect coincides with the c-axis
of the host lattice and should therefore be either an on-site point defect or
an axial complex defect along the c-axis.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 18(1998).
last updated Thursday, September 10, 1998 10:28:04 PM.© 1998 The Materials Research Society
