Figures

Figure 1

A thickness profile of the hetero-epitaxial GaN layer (GaN-C) obtained by single wavelength ellipsometry.

Figure 2

The SE parameters (data points), and , measured at an angle of incidence of 70.00°, was obtained at two subsequent times with an one-month interval. The lines are a guide to the eye.

Figure 3

The SE parameters (data points), and , measured at an angle of incidence of 70.00°, are fitted (solid line) using a multilayer model.

© 1998 The Materials Research Society