Tables for MIJ-NSR Volume 3, Article 17

Tables

Table 1

A summary of the results of the multilayer model used for GaN-C

GaN epilayer	d = 1456 nm


buffer layer	d = 20 nm
	n₁ = n₁(GaN) - 0.035
top-layer	d < 1 nm

Table 2

Comparison of the results obtained for GaN single crystals and GaN epilayers.

GaN single crystals	GaN epilayers
n₁( = 632.8 nm) = 2.337 ± 0.010	n₁( = 632.8 nm) = 2.328 ± 0.003
n₂ 0.003 for: 400 nm < < 800 nm	n₂ = 0.0005 for = 680 nm n₂ = 0.0007 for = 500 nm
roughness (top-bottom) of 0.5-3 nm	top-layer < 1 nm

last updated Friday, September 11, 1998 11:02:05 AM.

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