Figures

Figure 1

A thickness profile of the hetero-epitaxial GaN layer (GaN-C) obtained by single wavelength ellipsometry.

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Figure 2

The SE parameters (data points), and , measured at an angle of incidence of 70.00°, was obtained at two subsequent times with an one-month interval. The lines are a guide to the eye.

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Figure 3

The SE parameters (data points), and , measured at an angle of incidence of 70.00°, are fitted (solid line) using a multilayer model.

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© 1998 The Materials Research Society