Figures

Figure 1

T-x phase diagram of ternary In_xGa_1-xN compounds for: (a) relaxed layers, (b) strained layers with the interface orientation perpendicular to the hexagonal axis of the crystal.

Figure 2

T-x phase diagram of ternary In_xGa_1-xN compounds for: (a) strained layers of wurtzite modification with the interface orientation parallel to the hexagonal axis of the crystal, (b) strained layers of cubic modification with the interface lying in (001)-plane (notice the drastic change in the temperature and composition scales for the latter case).

© 1998 The Materials Research Society