Discussion of Article 16 in Volume 3

This is a discussion of the MIJ-NSR article entitled Suppression of phase separation in InGaN due to elastic strain by S. Yu. Karpov

Description of the paper by the reviewer(s):

Reviewer 1: Effect of elastic strain appearing in epitaxial InGaN layer coherently grown on GaN wafer on spinodal decomposition of the ternary compound is examined by the simulation using the regular solution approximation for Gibbs free energy added to the elastic energy of strained epitaxial layer. The effect results in considerable suppression of phase separation in the strained InGaN layers.

This discussion is moderated by S. Yu. Karpov.

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