Discussion of Article 15 in Volume 3

This is a discussion of the MIJ-NSR article entitled The role of piezoelectric fields in GaN-based quantum wells by Andreas Hangleiter , Jin Seo Im, H. Kollmer, S. Heppel, J. Off, Ferdinand Scholz

Description of the paper by the reviewer(s):

Reviewer 1: This paper provides onvincing arguments that the piezoelectric field plays an important role in determining the optical properties of InGaN/GaN and GaN/AlGaN quantum wells. Using time resolved photoluminescence and varing quantum well width, the authors are able to distinguish between the effects caused by the piezoelectric field and localization effects.

This discussion is moderated by Andreas Hangleiter .

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