Figure 4a

High-resolution SEM image of a GaN layer grown at near-stoichiometric conditions. The estimated surface roughness is ~20 nm, as determined by the nano-crystalline grains.

(click for full image)

Figure 4b

High-resolution SEM image of a GaN layer grown at near-stoichiometric conditions. It illustrates the columnar structure of small grains in the layer cross-section, while the surface part of the GaAs substrate shows neither indication of hollows, nor presence of polycrystalline structure.

(click for full image)

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