Figure 2a

High-resolution SEM image of a GaN layer grown at N-rich conditions. Trenches can be seen on the surface, however, the area in between is smooth.

(click for full image)

Figure 2b

High-resolution SEM image of a GaN layer grown at N-rich conditions. Both the layer surface and the GaAs substrate are shown, where part of the layer has been peeled off.

(click for full image)

Figure 2c

High-resolution SEM image of a GaN sample grown at N-rich conditions. The surface of the GaAs substrate is shown, revealing polycrystalline structure with hollows, where the GaN layer has been peeled off.

(click for full image)

Figure 2d

High-resolution SEM image of a GaN layer grown at N-rich conditions. The smooth backside of the peeled-off GaN layer is shown, revealing homogeneously distributed and randomly shaped hexagonal crystallites, originating from the GaAs substrate.

(click for full image)

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