Figures

Figure 1

Schematic of the HVPE growth system for GaN selective area growth

Figure 2

Schematic of the pattern used for the selective area coverage of the sapphire substrates. Textured area represents the SiO2 layer while the clear circles show the exposed sapphire substrate.

Figure 3

SEM image of the selective area grown GaN pyramid structures.

Figure 4

Edge and top view of one of the GaN hexagonal pyramid structures showing the texture of the top surface and the sidewalls. The edges of the square openings were oriented along the m-plane (010).

Figure 5

Room temperature PL from a GaN film (unintentionally doped) grown by HVPE

Figure 6

Stimulated emission from the GaN hexagonal pyramid structure. Peak intensity and emission linewidth as a function of incident power density.

© 1998 The Materials Research Society