Discussion of Article 13 in Volume 3

This is a discussion of the MIJ-NSR article entitled Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique by Raj Singh , Richard J. Barrett, John J. Gomes, Ferdynand P. Dabkowski , T.D. Moustakas

Description of the paper by the reviewer(s):

Reviewer 1: Selective area epitaxial lateral overgrowth (ELO) is an important technique to grow high quality GaN materials. Most ELO GaN have been reported by growing GaN on patterned pregrown-GaN seeding layers. This paper reports some interesting results on ELO GaN directly grown on patterned sapphire substrates by hydride vapor phase epitaxy (HVPE). The surface morphology of the overgrown regions was significantly improved as compared to the GaN grown directly on sapphire. With proper selection of the mask pattern, individual GaN columns with smooth and vertical walls were directly grown on the sapphire substrates. This approach may open a new way to fabricate some specially shaped device structures with a simple thermal budget and a high quality, and without post-growth etching.

This discussion is moderated by Raj Singh .

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