Figure 3

RHEED patterns of GaN(0001) surface with electron beam along the (110) direction. (a) Ga flux of 7.5x10¹⁴ cm^-2s^-1 (effusion cell temperature of 1095°C), (b) initial pattern with Ga flux of 6.3x10¹⁴ cm^-2s^-1 (effusion cell temperature of 1085°C), (c) same flux as (b) but after waiting several minutes, and (d) same surface as (a) but after reducing Ga flux to zero.

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