Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
A. R. Smith, V. Ramachandran, R. M. Feenstra
Department of Physics, Carnegie Mellon University
D. W. Greve
Department of Electrical and Computer Engineering, Carnegie Mellon University
A. Ptak, T. Myers
Department of Physics, West Virginia University
W. Sarney, L. Salamanca-Riba
Department of Materials and Nuclear Engineering, University of Maryland
M. Shin, M. Skowronski
Department of Materials Science and Engineering, Carnegie Mellon University
This article was received on Monday, July 20, 1998 and
accepted on Sunday, August 23, 1998. Abstract
Surface
reconstructions during homoepitaxial growth of GaN (0001) are studied using
reflection high-energy electron diffraction and scanning tunneling microscopy.
In agreement with previous workers, a distinct transition from rough to smooth
morphology is seen as a function of Ga to N ratio during growth. However, in
contrast to some prior reports, no evidence for a 2x2 reconstruction
during GaN growth is observed. Observations have been made using four
different nitrogen plasma sources, with similar results in each case. A
2x2 structure of the surface can be obtained, but only during nitridation
of the surface in the absence of a Ga flux. Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 12(1998).
last updated Thursday, August 14, 2003 4:00:32 PM.© 1998-2003 The Materials Research Society
